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Wide Bandgap Semiconductor Power Devices
Wide Bandgap Semiconductor Power Devices
Knygos.lt klubas Knygos.lt nariams
397,87 €
-30%
Įprastai
568,39 €
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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded…
  • Leidėjas:
  • ISBN-10: 0081023065
  • ISBN-13: 9780081023068
  • Formatas: 15.2 x 22.9 x 2.2 cm, minkšti viršeliai
  • Kalba: Anglų

Wide Bandgap Semiconductor Power Devices (el. knyga) (skaityta knyga) | knygos.lt

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Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

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  • Leidėjas:
  • ISBN-10: 0081023065
  • ISBN-13: 9780081023068
  • Formatas: 15.2 x 22.9 x 2.2 cm, minkšti viršeliai
  • Kalba: Anglų

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

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