Knygos.lt nariams
Knygos.lt nariams
- Išsiųsime per 12–18 d.d.
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- Autorius: John D Cressler
- Leidėjas: Artech House Publishers
- Metai: 2002
- Puslapiai: 588
- ISBN-10: 1580533612
- ISBN-13: 9781580533614
- Formatas: 16 x 23.7 x 4.1 cm, kieti viršeliai
- Kalba: Anglų
Silicon-Germanium Heterojunction Bipolar Transistors (el. knyga) (skaityta knyga) | knygos.lt
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Aprašymas
This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.
- Autorius: John D Cressler
- Leidėjas: Artech House Publishers
- Metai: 2002
- Puslapiai: 588
- ISBN-10: 1580533612
- ISBN-13: 9781580533614
- Formatas: 16 x 23.7 x 4.1 cm, kieti viršeliai
- Kalba: Anglų
This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology.
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