Knygos.lt nariams
Knygos.lt nariams
- Išsiųsime per 12–18 d.d.
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- Autorius: David Esseni
- Leidėjas: Cambridge University Press
- ISBN-10: 0521516846
- ISBN-13: 9780521516846
- Formatas: 17.5 x 24.9 x 2.8 cm, kieti viršeliai
- Kalba: Anglų
Atsiliepimai
Aprašymas
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: - Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials - All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework - Predictive capabilities of device models, discussed with systematic comparisons to experimental results
- Autorius: David Esseni
- Leidėjas: Cambridge University Press
- ISBN-10: 0521516846
- ISBN-13: 9780521516846
- Formatas: 17.5 x 24.9 x 2.8 cm, kieti viršeliai
- Kalba: Anglų
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: - Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials - All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework - Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Atsiliepimai