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Intelligent Integrated Systems
Intelligent Integrated Systems
Knygos.lt klubas Knygos.lt nariams
243,17 €
-30%
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347,39 €
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A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the c…
  • Leidėjas:
  • Metai: 2014
  • Puslapiai: 499
  • ISBN-10: 9814411426
  • ISBN-13: 9789814411424
  • Formatas: 16 x 23.1 x 3.3 cm, kieti viršeliai
  • Kalba: Anglų

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A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

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  • Leidėjas:
  • Metai: 2014
  • Puslapiai: 499
  • ISBN-10: 9814411426
  • ISBN-13: 9789814411424
  • Formatas: 16 x 23.1 x 3.3 cm, kieti viršeliai
  • Kalba: Anglų

A state-of-the-art overview by internationally recognized researchers, this book reviews the architectures of breakthrough devices required for future intelligent integrated systems. It highlights advanced ailicon-based CMOS technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. It illustrates how to augment silicon technologies by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.

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