124,29 €
Design of 2.4 GHZ CMOS Frontend for Bluetooth
Design of 2.4 GHZ CMOS Frontend for Bluetooth
124,29 €
  • Išsiųsime per 14–16 d.d.
Inhaltsangabe: Abstract: The Bluetooth wireless technology is the worlds new short-range RF transmission standard for small form factor, low-cost, short-range radio links between portable or desktop devices. The technology promises to eliminate the confusion of cables, connectors and protocols confounding communications between today high tech products. In the first step a 2.45 GHz Low Noise Amplifier (LNA), intended for use in a Bluetooth receiver, has been designed in a standard 0.18 um CMOS…
124.29
  • Autorius: Florian Krug
  • Leidėjas:
  • Metai: 2001
  • Puslapiai: 80
  • ISBN-10: 3838641949
  • ISBN-13: 9783838641942
  • Formatas: 14.8 x 21 x 0.5 cm, minkšti viršeliai
  • Kalba: Anglų

Design of 2.4 GHZ CMOS Frontend for Bluetooth + nemokamas atvežimas! | knygos.lt

Atsiliepimai

Įvertinimų nėra.
Įvertink ir tu! Visi atsiliepimai

Aprašymas

Inhaltsangabe: Abstract: The Bluetooth wireless technology is the worlds new short-range RF transmission standard for small form factor, low-cost, short-range radio links between portable or desktop devices. The technology promises to eliminate the confusion of cables, connectors and protocols confounding communications between today high tech products. In the first step a 2.45 GHz Low Noise Amplifier (LNA), intended for use in a Bluetooth receiver, has been designed in a standard 0.18 um CMOS process. The amplifier provides a simulated switchable forward voltage gain of +16 / -7.7 dB with a simulated noise Figure (NF) of only 3 dB while drawing 2.8 mA from a 1.8 V supply. The die area of the LNA (pads included) is 0.79 mm2. In the second step a 2.45 GHz Power Amplifier (PA), also intended for the Bluetooth standard, has been designed in the same 0.18 um CMOS process as for the LNA. The class-A PA achieves a simulated forward gain (S21) of 23 dB and a simulated output 1 dB compression point (P1dB ) of 5.5 dBm, with a power-added efficiency (PAE) of 23 % while drawing 15.8 mA from a 1.8 V supply. The die area of the PA (pads included) is 2.1 mm2. Inhaltsverzeichnis: Table of Contents: 1.Introduction1 1.1Motivation1 1.2Organization2 2.The Bluetooth standard3 2.1Bluetooth as branding-name3 2.2Bluetooth RF requirements4 2.3System design4 2.3.1Receiver architectures4 2.3.2Transmitter architectures6 3.RF CMOS technology9 3.1The foundry9 3.1.1Technology overview9 3.1.2Process Characteristic9 3.2Design Flow10 3.2.1Cadence10 3.2.2SpectreRF10 4.Integrated spiral inductors11 4.1View and physical dimension of spiral11 4.2Model for on-chip spiral inductors12 5.Low Noise Amplifier13 5.1Architecture choices13 5.1.1Recent studies13 5.1.2LNA Architectures13 5.1.3Architecture properties14 5.1.4Architecture choice14 5.2A little piece of theory15 5.2.1Standard MOS noise model15 5.2.2Noise Figure16 5.2.3Input impedance16 5.2.4Voltage Gain18 5.2.5S
124,29 €
Išsiųsime per 14–16 d.d.
Prisijunkite ir už šią prekę
gausite 1,24 Knygų Eurų!?

Inhaltsangabe: Abstract: The Bluetooth wireless technology is the worlds new short-range RF transmission standard for small form factor, low-cost, short-range radio links between portable or desktop devices. The technology promises to eliminate the confusion of cables, connectors and protocols confounding communications between today high tech products. In the first step a 2.45 GHz Low Noise Amplifier (LNA), intended for use in a Bluetooth receiver, has been designed in a standard 0.18 um CMOS process. The amplifier provides a simulated switchable forward voltage gain of +16 / -7.7 dB with a simulated noise Figure (NF) of only 3 dB while drawing 2.8 mA from a 1.8 V supply. The die area of the LNA (pads included) is 0.79 mm2. In the second step a 2.45 GHz Power Amplifier (PA), also intended for the Bluetooth standard, has been designed in the same 0.18 um CMOS process as for the LNA. The class-A PA achieves a simulated forward gain (S21) of 23 dB and a simulated output 1 dB compression point (P1dB ) of 5.5 dBm, with a power-added efficiency (PAE) of 23 % while drawing 15.8 mA from a 1.8 V supply. The die area of the PA (pads included) is 2.1 mm2. Inhaltsverzeichnis: Table of Contents: 1.Introduction1 1.1Motivation1 1.2Organization2 2.The Bluetooth standard3 2.1Bluetooth as branding-name3 2.2Bluetooth RF requirements4 2.3System design4 2.3.1Receiver architectures4 2.3.2Transmitter architectures6 3.RF CMOS technology9 3.1The foundry9 3.1.1Technology overview9 3.1.2Process Characteristic9 3.2Design Flow10 3.2.1Cadence10 3.2.2SpectreRF10 4.Integrated spiral inductors11 4.1View and physical dimension of spiral11 4.2Model for on-chip spiral inductors12 5.Low Noise Amplifier13 5.1Architecture choices13 5.1.1Recent studies13 5.1.2LNA Architectures13 5.1.3Architecture properties14 5.1.4Architecture choice14 5.2A little piece of theory15 5.2.1Standard MOS noise model15 5.2.2Noise Figure16 5.2.3Input impedance16 5.2.4Voltage Gain18 5.2.5S

Atsiliepimai

  • Atsiliepimų nėra
0 pirkėjai įvertino šią prekę.
5
0%
4
0%
3
0%
2
0%
1
0%
× promo banner