- Išparduota
/https://libri-media.knygos-static.lt/f3c2c9ed-c276-4df5-bf70-9707aa160073/1)
- Autorius: Manijeh Razeghi
- Leidėjas: Taylor & Francis Ltd.
- Metai: 2010
- Puslapiai: 799
- ISBN: 9781439807002
- ISBN-10: 1439807000
- ISBN-13: 9781439807002
- Formatas: ACSM ?
- Kalba: Anglų
Atsiliepimai
Formatai:
Aprašymas
Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. It also discusses electronic devices and provides an overview of optoelectronic integrated circuits (OEICs). It then reviews InP-InP and GaInAs(P)-InP MO
Elektroninė knyga:
Atsiuntimas po užsakymo akimirksniu! Skirta skaitymui tik kompiuteryje, planšetėje ar kitame elektroniniame įrenginyje.
Kaip skaityti el. knygas ACSM formatu?
Mažiausia kaina per 30 dienų: 166,69 €
Mažiausia kaina užfiksuota: Kaina nesikeitė
- Autorius: Manijeh Razeghi
- Leidėjas: Taylor & Francis Ltd.
- Metai: 2010
- Puslapiai: 799
- ISBN: 9781439807002
- ISBN-10: 1439807000
- ISBN-13: 9781439807002
- Formatas: ACSM ?
- Kalba: Anglų
Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. It also discusses electronic devices and provides an overview of optoelectronic integrated circuits (OEICs). It then reviews InP-InP and GaInAs(P)-InP MO
Atsiliepimai