MOVPE growth and characterization of (In,Ga)N quantum structures for laser diodes emitting at 440 nm (el. knyga) (skaityta knyga) | knygos.lt

[{"option":"222","probability":1,"style":{"backgroundColor":"#ffffff"},"image":{"uri":"\/uploads\/images\/wheel_of_fortune\/6a3ba631ba76d1782294065.png","sizeMultiplier":0.6,"landscape":true,"offsetX":-50}},{"option":"221","probability":1.3,"style":{"backgroundColor":"#e1032e"},"image":{"uri":"\/uploads\/images\/wheel_of_fortune\/6a3ba61ea9f381782294046.png","sizeMultiplier":0.6,"landscape":true,"offsetX":-50}},{"option":"220","probability":1.6,"style":{"backgroundColor":"#ffffff"},"image":{"uri":"\/uploads\/images\/wheel_of_fortune\/6a3ba60167d251782294017.png","sizeMultiplier":0.6,"landscape":true,"offsetX":-50}},{"option":"219","probability":1.5,"style":{"backgroundColor":"#e2022e"},"image":{"uri":"\/uploads\/images\/wheel_of_fortune\/6a3ba5ea1c47d1782293994.png","sizeMultiplier":0.6,"landscape":true,"offsetX":-50}},{"option":"218","probability":1.5,"style":{"backgroundColor":"#ffffff"},"image":{"uri":"\/uploads\/images\/wheel_of_fortune\/6a3ba5d38b4a21782293971.png","sizeMultiplier":0.6,"landscape":true,"offsetX":-50}},{"option":"217","probability":1.6,"style":{"backgroundColor":"#e3022e"},"image":{"uri":"\/uploads\/images\/wheel_of_fortune\/6a3ba5b981b7a1782293945.png","sizeMultiplier":0.6,"landscape":true,"offsetX":-50}},{"option":"216","probability":1.4,"style":{"backgroundColor":"#ffffff"},"image":{"uri":"\/uploads\/images\/wheel_of_fortune\/6a3ba58b535551782293899.png","sizeMultiplier":0.6,"landscape":true,"offsetX":-50}},{"option":"215","probability":0.1,"style":{"backgroundColor":"#ffe01a"},"image":{"uri":"\/uploads\/images\/wheel_of_fortune\/6a3ba53a6496f1782293818.png","sizeMultiplier":0.6,"landscape":true,"offsetX":-50}}]