137,49 €
Modeling and Characterization of RF and Microwave Power FETs
Modeling and Characterization of RF and Microwave Power FETs
  • Išparduota
Modeling and Characterization of RF and Microwave Power FETs
Modeling and Characterization of RF and Microwave Power FETs
El. knyga:
137,49 €
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semi…

Modeling and Characterization of RF and Microwave Power FETs (el. knyga) (skaityta knyga) | knygos.lt

Atsiliepimai

(4.00 Goodreads įvertinimas)

Formatai:

137,49 € El. knyga

Aprašymas

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

137,49 €
Prisijunkite ir už šią prekę
gausite
1,37 Knygų Eurų! ?

Elektroninė knyga:
Atsiuntimas po užsakymo akimirksniu! Skirta skaitymui tik kompiuteryje, planšetėje ar kitame elektroniniame įrenginyje.

Kaip skaityti el. knygas ACSM formatu?

Mažiausia kaina per 30 dienų: 137,49 €

Mažiausia kaina užfiksuota: 2026-08-28 02:36:01


This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Atsiliepimai

  • Atsiliepimų nėra
0 pirkėjai įvertino šią prekę.
5
0%
4
0%
3
0%
2
0%
1
0%
(rodomas nebus)