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- Autorius: John D. Cressler
- Leidėjas: Taylor & Francis
- Metai: 2018
- Puslapiai: 200
- ISBN: 9781351834766
- ISBN-10: 1351834762
- ISBN-13: 9781351834766
- Formatas: ACSM ?
- Kalba: Anglų
Cressler, J: Measurement and Modeling of Silicon Heterostruc (el. knyga) (skaityta knyga) | knygos.lt
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When you see a nicely presented set of data, the natural response is: "e;How did they do that; what tricks did they use; and how can I do that for myself?"e; Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
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- Autorius: John D. Cressler
- Leidėjas: Taylor & Francis
- Metai: 2018
- Puslapiai: 200
- ISBN: 9781351834766
- ISBN-10: 1351834762
- ISBN-13: 9781351834766
- Formatas: ACSM ?
- Kalba: Anglų
When you see a nicely presented set of data, the natural response is: "e;How did they do that; what tricks did they use; and how can I do that for myself?"e; Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Atsiliepimai